CY14B108L-ZS20XI

CY14B108L-ZS20XI
Attribute
Description
Manufacturer Part Number
CY14B108L-ZS20XI
Description
NO WARRANTY
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line -
IC Encapsulation Type Tray
Availability Status Active
RAM Technology Category Non-Volatile
Storage Media Type NVSRAM
Core Technology Platform NVSRAM (Non-Volatile SRAM)
Total Memory Bytes 8Mbit
Storage Layout Structure 1M x 8
Data Access Bus Parallel
Timing Pulse Rate -
Memory Write Speed Word/Page 20ns
Data Retrieval Speed 20 ns
Power Supply Voltage 2.7V ~ 3.6V
Ambient Temp Range -40°C ~ 85°C (TA)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Component Housing Style 44-TSOP (0.400", 10.16mm Width)
Vendor Package Type 44-TSOP II

Description

Reaches access speeds recorded at 20 ns for efficient data retrieval. Storage format NVSRAM for data interoperability. Memory bus Parallel for connectivity and performance. Memory arrangement 1M x 8 for optimal data retrieval. Memory total 8Mbit for device storage capability. Memory classification Non-Volatile for efficiency and compatibility. Mounting style Surface Mount for structural integrity. Operating temperature -40°C ~ 85°C (TA) for thermal stability. Enclosure Tray for component protection or transport. Enclosure/case 44-TSOP (0.400", 10.16mm Width) providing mechanical and thermal shielding. Enclosure type 44-TSOP II ensuring device integrity. Product condition Active for availability and lifecycle. Manufacturer package type 44-TSOP II for component choice. Voltage supply 2.7V ~ 3.6V for electrical needs. Platform technology NVSRAM (Non-Volatile SRAM) for the type of product. Operating supply voltage 2.7V ~ 3.6V for the device. Time taken to write per word or page 20ns for memory units.

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