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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | Tariff may apply if shipping to the United States | |
| Product Series Line | - | |
| IC Encapsulation Type | Tape & Reel (TR) | |
| RAM Technology Category | Non-Volatile | |
| Storage Media Type | FLASH | |
| Core Technology Platform | FLASH - NOR | |
| Total Memory Bytes | 16Mbit | |
| Storage Layout Structure | 2M x 8 | |
| Data Access Bus | SPI - Quad I/O | |
| Timing Pulse Rate | 120 MHz | |
| Memory Write Speed Word/Page | 50µs, 2.4ms | |
| Data Retrieval Speed | - | |
| Power Supply Voltage | 2.7V ~ 3.6V | |
| Ambient Temp Range | -40°C ~ 85°C (TA) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 8-UDFN Exposed Pad | |
| Vendor Package Type | 8-USON (4x3) |
Description
Measures resistance at forward current Tariff may apply if shipping to the United States for LED or diode evaluation. Functions at a clock frequency of 120 MHz. Storage format FLASH for data interoperability. Memory bus SPI - Quad I/O for connectivity and performance. Memory arrangement 2M x 8 for optimal data retrieval. Memory total 16Mbit for device storage capability. Memory classification Non-Volatile for efficiency and compatibility. Mounting style Surface Mount for structural integrity. Operating temperature -40°C ~ 85°C (TA) for thermal stability. Enclosure Tape & Reel (TR) for component protection or transport. Enclosure/case 8-UDFN Exposed Pad providing mechanical and thermal shielding. Enclosure type 8-USON (4x3) ensuring device integrity. Manufacturer package type 8-USON (4x3) for component choice. Voltage supply 2.7V ~ 3.6V for electrical needs. Classification for tariffs Tariff may apply if shipping to the United States regarding import/export. Platform technology FLASH - NOR for the type of product. Peak Vce(on) at Vge Tariff may apply if shipping to the United States for transistor parameters. Operating supply voltage 2.7V ~ 3.6V for the device. Time taken to write per word or page 50µs, 2.4ms for memory units.
