GD25Q80CSIGR

GD25Q80CSIGR
Attribute
Description
Manufacturer Part Number
GD25Q80CSIGR
Description
IC FLASH 8MBIT SPI/QUAD I/O 8SOP
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
Import Duty Classification Tariff may apply if shipping to the United States
Product Series Line -
IC Encapsulation Type Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
RAM Technology Category Non-Volatile
Storage Media Type FLASH
Core Technology Platform FLASH - NOR
Total Memory Bytes 8Mbit
Storage Layout Structure 1M x 8
Data Access Bus SPI - Quad I/O
Timing Pulse Rate 120 MHz
Memory Write Speed Word/Page 50µs, 2.4ms
Data Retrieval Speed -
Power Supply Voltage 2.7V ~ 3.6V
Ambient Temp Range -40°C ~ 85°C (TA)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Component Housing Style 8-SOIC (0.209", 5.30mm Width)
Vendor Package Type 8-SOP

Description

Measures resistance at forward current Tariff may apply if shipping to the United States for LED or diode evaluation. Functions at a clock frequency of 120 MHz. Storage format FLASH for data interoperability. Memory bus SPI - Quad I/O for connectivity and performance. Memory arrangement 1M x 8 for optimal data retrieval. Memory total 8Mbit for device storage capability. Memory classification Non-Volatile for efficiency and compatibility. Mounting style Surface Mount for structural integrity. Operating temperature -40°C ~ 85°C (TA) for thermal stability. Enclosure Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for component protection or transport. Enclosure/case 8-SOIC (0.209", 5.30mm Width) providing mechanical and thermal shielding. Enclosure type 8-SOP ensuring device integrity. Manufacturer package type 8-SOP for component choice. Voltage supply 2.7V ~ 3.6V for electrical needs. Classification for tariffs Tariff may apply if shipping to the United States regarding import/export. Platform technology FLASH - NOR for the type of product. Peak Vce(on) at Vge Tariff may apply if shipping to the United States for transistor parameters. Operating supply voltage 2.7V ~ 3.6V for the device. Time taken to write per word or page 50µs, 2.4ms for memory units.

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