MT47H32M16HR-25E IT:G TR

MT47H32M16HR-25E IT:G TR
Attribute
Description
Manufacturer Part Number
MT47H32M16HR-25E IT:G TR
Manufacturer
Description
IC DRAM 512MBIT PARALLEL 84FBGA
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Stock:
7890

Distributor: 145

Lead Time: Not specified

Quantity Unit Price Ext. Price
36 ₹ 746.85 ₹ 26,886.60
29 ₹ 777.98 ₹ 22,561.42
23 ₹ 809.09 ₹ 18,609.07
16 ₹ 871.33 ₹ 13,941.28
10 ₹ 902.45 ₹ 9,024.50
5 ₹ 964.68 ₹ 4,823.40

Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line -
IC Encapsulation Type Tape & Reel (TR)
Availability Status Obsolete
RAM Technology Category Volatile
Storage Media Type DRAM
Core Technology Platform SDRAM - DDR2
Total Memory Bytes 512Mbit
Storage Layout Structure 32M x 16
Data Access Bus Parallel
Timing Pulse Rate 400 MHz
Memory Write Speed Word/Page 15ns
Data Retrieval Speed 400 ps
Power Supply Voltage 1.7V ~ 1.9V
Ambient Temp Range -40°C ~ 95°C (TC)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Component Housing Style 84-TFBGA
Vendor Package Type 84-FBGA (8x12.5)

Description

Reaches access speeds recorded at 400 ps for efficient data retrieval. Functions at a clock frequency of 400 MHz. Storage format DRAM for data interoperability. Memory bus Parallel for connectivity and performance. Memory arrangement 32M x 16 for optimal data retrieval. Memory total 512Mbit for device storage capability. Memory classification Volatile for efficiency and compatibility. Mounting style Surface Mount for structural integrity. Operating temperature -40°C ~ 95°C (TC) for thermal stability. Enclosure Tape & Reel (TR) for component protection or transport. Enclosure/case 84-TFBGA providing mechanical and thermal shielding. Enclosure type 84-FBGA (8x12.5) ensuring device integrity. Product condition Obsolete for availability and lifecycle. Manufacturer package type 84-FBGA (8x12.5) for component choice. Voltage supply 1.7V ~ 1.9V for electrical needs. Platform technology SDRAM - DDR2 for the type of product. Operating supply voltage 1.7V ~ 1.9V for the device. Time taken to write per word or page 15ns for memory units.

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