LH5116-10

LH5116-10
Attribute
Description
Manufacturer Part Number
LH5116-10
Description
IC SRAM 16KBIT PARALLEL 24DIP
Note : GST will not be applied to orders shipping outside of India

Stock:
1

Distributor: 125

Lead Time: Not specified

Quantity Unit Price Ext. Price
1000 ₹ 222.50 ₹ 2,22,500.00
100 ₹ 256.32 ₹ 25,632.00
1 ₹ 342.65 ₹ 342.65

Stock:
12

Distributor: 118

Lead Time: Not specified


Quantity Unit Price Ext. Price
10 ₹ 9,456.25 ₹ 94,562.50
5 ₹ 10,012.50 ₹ 50,062.50
1 ₹ 11,125.00 ₹ 11,125.00

Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line -
IC Encapsulation Type Tube
Availability Status Obsolete
RAM Technology Category Volatile
Storage Media Type SRAM
Core Technology Platform SRAM
Total Memory Bytes 16Kbit
Storage Layout Structure 2K x 8
Data Access Bus Parallel
Timing Pulse Rate -
Memory Write Speed Word/Page 100ns
Data Retrieval Speed 100 ns
Power Supply Voltage 4.5V ~ 5.5V
Ambient Temp Range 0°C ~ 70°C (TA)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Through Hole
Component Housing Style 24-DIP (0.600", 15.24mm)
Vendor Package Type 24-DIP

Description

Reaches access speeds recorded at 100 ns for efficient data retrieval. Storage format SRAM for data interoperability. Memory bus Parallel for connectivity and performance. Memory arrangement 2K x 8 for optimal data retrieval. Memory total 16Kbit for device storage capability. Memory classification Volatile for efficiency and compatibility. Mounting style Through Hole for structural integrity. Operating temperature 0°C ~ 70°C (TA) for thermal stability. Enclosure Tube for component protection or transport. Enclosure/case 24-DIP (0.600", 15.24mm) providing mechanical and thermal shielding. Enclosure type 24-DIP ensuring device integrity. Product condition Obsolete for availability and lifecycle. Manufacturer package type 24-DIP for component choice. Voltage supply 4.5V ~ 5.5V for electrical needs. Platform technology SRAM for the type of product. Operating supply voltage 4.5V ~ 5.5V for the device. Time taken to write per word or page 100ns for memory units.

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