BPW34

BPW34
Attribute
Description
Manufacturer Part Number
BPW34
Manufacturer
Description
SENSOR PHOTODIODE 850NM 2DIP
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
Import Duty Classification Tariff may apply if shipping to the United States
Product Series Line -
IC Encapsulation Type Tube
Availability Status Active
Light Wavelength nm 850nm
Vivid Color Option -
Light Spectrum Coverage 400nm ~ 1100nm
Semiconductor Diode Category PIN
Sensitivity at Wavelength -
Activation Speed ms 20ns
Max Reverse DC Voltage 32 V
Typical Dark Current 2nA
Functional Surface Area 7mm²
Display View Cone Degrees 120°
Ambient Temp Range -40°C ~ 85°C
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Through Hole
Component Housing Style 2-DIP (0.213", 5.40mm)

Description

Boasts an active display region of 7mm² for enhanced visibility. Measures resistance at forward current Tariff may apply if shipping to the United States for LED or diode evaluation. Features a typical dark current measured at 2nA. Includes diode type indicated as PIN. Mounting style Through Hole for structural integrity. Operating temperature -40°C ~ 85°C for thermal stability. Enclosure Tube for component protection or transport. Enclosure/case 2-DIP (0.213", 5.40mm) providing mechanical and thermal shielding. Product condition Active for availability and lifecycle. Response duration 20ns for quick operation or detection. Spectral range 400nm ~ 1100nm for lighting or sensor use. Classification for tariffs Tariff may apply if shipping to the United States regarding import/export. Peak Vce(on) at Vge Tariff may apply if shipping to the United States for transistor parameters. Angle of view 120° for displays. Highest DC reverse voltage 32 V for diodes. Light wavelength 850nm for RF or optical instruments.

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