MTD5010W

MTD5010W
Attribute
Description
Manufacturer Part Number
MTD5010W
Description
SENSOR PHOTODIODE 850NM TO18
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line -
IC Encapsulation Type Bulk
Availability Status Obsolete
Light Wavelength nm 850nm
Vivid Color Option Infrared (NIR)/Red
Light Spectrum Coverage 400nm ~ 1100nm
Semiconductor Diode Category -
Sensitivity at Wavelength 0.2 A/W @ 450nm
Activation Speed ms 3.5ns
Max Reverse DC Voltage 30 V
Typical Dark Current 5nA
Functional Surface Area -
Display View Cone Degrees 110°
Ambient Temp Range -30°C ~ 100°C
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Through Hole
Component Housing Style -

Description

Features improved color rendering rated at Infrared (NIR)/Red for superior appearance. Features a typical dark current measured at 5nA. Utilizes Infrared (NIR)/Red type of illumination for ideal lighting. Mounting style Through Hole for structural integrity. Operating temperature -30°C ~ 100°C for thermal stability. Enclosure Bulk for component protection or transport. Product condition Obsolete for availability and lifecycle. Response duration 3.5ns for quick operation or detection. Sensitivity at wavelength 0.2 A/W @ 450nm for optical sensing. Spectral range 400nm ~ 1100nm for lighting or sensor use. Angle of view 110° for displays. Highest DC reverse voltage 30 V for diodes. Light wavelength 850nm for RF or optical instruments.

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