Attribute
Description
Manufacturer Part Number
ODD-660W
Manufacturer
Description
SENSOR PHOTODIODE 660NM T/H
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | - | |
| IC Encapsulation Type | Bulk | |
| Availability Status | Obsolete | |
| Light Wavelength nm | 660nm | |
| Vivid Color Option | - | |
| Light Spectrum Coverage | 450nm ~ 750nm | |
| Semiconductor Diode Category | - | |
| Sensitivity at Wavelength | 0.4 A/W @ 660nm | |
| Activation Speed ms | 40ns | |
| Max Reverse DC Voltage | 1 V | |
| Typical Dark Current | 50pA | |
| Functional Surface Area | 0.62mm² | |
| Display View Cone Degrees | - | |
| Ambient Temp Range | -30°C ~ 85°C | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | - |
Description
Boasts an active display region of 0.62mm² for enhanced visibility. Features a typical dark current measured at 50pA. Mounting style Through Hole for structural integrity. Operating temperature -30°C ~ 85°C for thermal stability. Enclosure Bulk for component protection or transport. Product condition Obsolete for availability and lifecycle. Response duration 40ns for quick operation or detection. Sensitivity at wavelength 0.4 A/W @ 660nm for optical sensing. Spectral range 450nm ~ 750nm for lighting or sensor use. Highest DC reverse voltage 1 V for diodes. Light wavelength 660nm for RF or optical instruments.
