NAND01GW3B2AN6E

NAND01GW3B2AN6E
Attribute
Description
Manufacturer Part Number
NAND01GW3B2AN6E
Manufacturer
Description
IC FLASH 1GBIT PARALLEL 48TSOP
Manufacturer Lead Time
55 weeks

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Product Attributes

Type Description
Category
Import Duty Classification Tariff may apply if shipping to the United States
Product Series Line -
IC Encapsulation Type Tube
Availability Status Obsolete
RAM Technology Category Non-Volatile
Storage Media Type FLASH
Core Technology Platform FLASH - NAND
Total Memory Bytes 1Gbit
Storage Layout Structure 128M x 8
Data Access Bus Parallel
Timing Pulse Rate -
Memory Write Speed Word/Page 30ns
Data Retrieval Speed 30 ns
Power Supply Voltage 2.7V ~ 3.6V
Ambient Temp Range -40°C ~ 85°C (TA)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Component Housing Style 48-TFSOP (0.724", 18.40mm Width)
Vendor Package Type 48-TSOP

Description

Reaches access speeds recorded at 30 ns for efficient data retrieval. Measures resistance at forward current Tariff may apply if shipping to the United States for LED or diode evaluation. Storage format FLASH for data interoperability. Memory bus Parallel for connectivity and performance. Memory arrangement 128M x 8 for optimal data retrieval. Memory total 1Gbit for device storage capability. Memory classification Non-Volatile for efficiency and compatibility. Mounting style Surface Mount for structural integrity. Operating temperature -40°C ~ 85°C (TA) for thermal stability. Enclosure Tube for component protection or transport. Enclosure/case 48-TFSOP (0.724", 18.40mm Width) providing mechanical and thermal shielding. Enclosure type 48-TSOP ensuring device integrity. Product condition Obsolete for availability and lifecycle. Manufacturer package type 48-TSOP for component choice. Voltage supply 2.7V ~ 3.6V for electrical needs. Classification for tariffs Tariff may apply if shipping to the United States regarding import/export. Platform technology FLASH - NAND for the type of product. Peak Vce(on) at Vge Tariff may apply if shipping to the United States for transistor parameters. Operating supply voltage 2.7V ~ 3.6V for the device. Time taken to write per word or page 30ns for memory units.

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