IXKR47N60C5

IXKR47N60C5
Attribute
Description
Manufacturer Part Number
IXKR47N60C5
Manufacturer
Description
MOSFET N-CH 600V 47A ISOPLUS247
Manufacturer Lead Time
38 weeks

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Product Attributes

Type Description
Category
Field Effect Transistor Type MOSFET N-Channel, Metal Oxide
Drain-Source Breakdown Volts 600V
Continuous Drain Current at 25C 47A (Tc)
Max On-State Resistance 45 mOhm @ 44A, 10V
Max Threshold Gate Voltage 3.5V @ 3mA
Gate Charge at Vgs 190nC @ 10V
Input Cap at Vds 6800pF @ 100V
Maximum Power Handling -
Attachment Mounting Style Through Hole
Component Housing Style -

Description

Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 47A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 600V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 190nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 6800pF @ 100V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Peak Rds(on) at Id 190nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 45 mOhm @ 44A, 10V for MOSFET criteria. Peak Vgs(th) at Id 3.5V @ 3mA for MOSFET threshold level.

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