Stock: 2000
Distributor: 160
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 10000 | ₹ 90.78 | ₹ 9,07,800.00 |
| 1000 | ₹ 97.01 | ₹ 97,010.00 |
| 500 | ₹ 102.35 | ₹ 51,175.00 |
| 100 | ₹ 108.58 | ₹ 10,858.00 |
| 25 | ₹ 113.92 | ₹ 2,848.00 |
Stock: 2000
Distributor: 135
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 10000 | ₹ 90.78 | ₹ 9,07,800.00 |
| 1000 | ₹ 97.01 | ₹ 97,010.00 |
| 500 | ₹ 102.35 | ₹ 51,175.00 |
| 100 | ₹ 108.58 | ₹ 10,858.00 |
| 25 | ₹ 113.92 | ₹ 2,848.00 |
Stock: 2000
Distributor: 111
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 10000 | ₹ 113.47 | ₹ 11,34,700.00 |
| 1000 | ₹ 121.26 | ₹ 1,21,260.00 |
| 500 | ₹ 127.94 | ₹ 63,970.00 |
| 246 | ₹ 135.72 | ₹ 33,387.12 |
Stock: 2000
Distributor: 117
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 188 | ₹ 142.69 | ₹ 26,825.72 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | - | |
| IC Encapsulation Type | Bulk | |
| Availability Status | Active | |
| Field Effect Transistor Type | N-Channel | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Drain-Source Breakdown Volts | 500 V | |
| Continuous Drain Current at 25C | 9.6A (Tc) | |
| Gate Drive Voltage Range | - | |
| Max On-State Resistance | 520mOhm @ 7A, 10V | |
| Max Threshold Gate Voltage | - | |
| Max Gate Charge at Vgs | 38.4 nC @ 10 V | |
| Maximum Gate Voltage | - | |
| Max Input Cap at Vds | 1000 pF @ 30 V | |
| Transistor Special Function | - | |
| Max Heat Dissipation | 2W (Ta), 37W (Tc) | |
| Ambient Temp Range | 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Through Hole | |
| Vendor Package Type | TO-220FI(LS) | |
| Component Housing Style | TO-220-3 Full Pack |
Description
Supports a continuous drain current (Id) of 9.6A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 500 V. Accommodates FET classification identified as N-Channel. Guarantees maximum 38.4 nC @ 10 V gate charge at Vgs for enhanced switching efficiency. Upholds 38.4 nC @ 10 V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 1000 pF @ 30 V at Vds for safeguarding the device. The input capacitance is rated at 1000 pF @ 30 V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Operating temperature 150°C (TJ) for thermal stability. Enclosure Bulk for component protection or transport. Enclosure/case TO-220-3 Full Pack providing mechanical and thermal shielding. Enclosure type TO-220FI(LS) ensuring device integrity. Highest power dissipation 2W (Ta), 37W (Tc) for effective thermal control. Product condition Active for availability and lifecycle. Peak Rds(on) at Id 38.4 nC @ 10 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 520mOhm @ 7A, 10V for MOSFET criteria. Manufacturer package type TO-220FI(LS) for component choice. Platform technology MOSFET (Metal Oxide) for the type of product.
