STP7NK40Z

Description

Supports a continuous drain current (Id) of 5.4A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 400 V. Accommodates drive voltage specified at 10V for RdsOn regulation. Accommodates FET classification identified as N-Channel. Guarantees maximum 26 nC @ 10 V gate charge at Vgs for enhanced switching efficiency. Upholds 26 nC @ 10 V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 535 pF @ 25 V at Vds for safeguarding the device. The input capacitance is rated at 535 pF @ 25 V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Operating temperature -55°C ~ 150°C (TJ) for thermal stability. Enclosure Tube for component protection or transport. Enclosure/case TO-220-3 providing mechanical and thermal shielding. Enclosure type TO-220 ensuring device integrity. Highest power dissipation 70W (Tc) for effective thermal control. Product condition Active for availability and lifecycle. Peak Rds(on) at Id 26 nC @ 10 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 1Ohm @ 2.7A, 10V for MOSFET criteria. Product or component classification series SuperMESH™. Manufacturer package type TO-220 for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs ±30V for MOSFET parameters. Peak Vgs(th) at Id 4.5V @ 50µA for MOSFET threshold level.