STW75NF30
Data Sheet
Stock: 31
Distributor: 118
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 11 | ₹ 164.20 | ₹ 1,806.20 |
| 4 | ₹ 218.94 | ₹ 875.76 |
| 1 | ₹ 328.41 | ₹ 328.41 |
Stock: 300
Distributor: 145
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 67 | ₹ 404.54 | ₹ 27,104.18 |
| 50 | ₹ 451.22 | ₹ 22,561.00 |
| 39 | ₹ 466.78 | ₹ 18,204.42 |
| 28 | ₹ 482.34 | ₹ 13,505.52 |
| 18 | ₹ 497.90 | ₹ 8,962.20 |
| 8 | ₹ 606.82 | ₹ 4,854.56 |
Stock: 90
Distributor: 120
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 69 | ₹ 507.64 | ₹ 35,027.16 |
| 27 | ₹ 528.78 | ₹ 14,277.06 |
| 16 | ₹ 571.10 | ₹ 9,137.60 |
| 6 | ₹ 634.54 | ₹ 3,807.24 |
| 1 | ₹ 846.06 | ₹ 846.06 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | Tariff may apply if shipping to the United States | |
| Product Series Line | STripFET™ | |
| IC Encapsulation Type | Tube | |
| Availability Status | Obsolete | |
| Field Effect Transistor Type | N-Channel | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Drain-Source Breakdown Volts | 300 V | |
| Continuous Drain Current at 25C | 60A (Tc) | |
| Gate Drive Voltage Range | 10V | |
| Max On-State Resistance | 45mOhm @ 30A, 10V | |
| Max Threshold Gate Voltage | 4V @ 250µA | |
| Max Gate Charge at Vgs | 164 nC @ 10 V | |
| Maximum Gate Voltage | ±20V | |
| Max Input Cap at Vds | 5930 pF @ 25 V | |
| Transistor Special Function | - | |
| Max Heat Dissipation | 320W (Tc) | |
| Ambient Temp Range | -55°C ~ 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Through Hole | |
| Vendor Package Type | TO-247-3 | |
| Component Housing Style | TO-247-3 |
Description
Measures resistance at forward current Tariff may apply if shipping to the United States for LED or diode evaluation. Supports a continuous drain current (Id) of 60A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 300 V. Accommodates drive voltage specified at 10V for RdsOn regulation. Accommodates FET classification identified as N-Channel. Guarantees maximum 164 nC @ 10 V gate charge at Vgs for enhanced switching efficiency. Upholds 164 nC @ 10 V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 5930 pF @ 25 V at Vds for safeguarding the device. The input capacitance is rated at 5930 pF @ 25 V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Operating temperature -55°C ~ 150°C (TJ) for thermal stability. Enclosure Tube for component protection or transport. Enclosure/case TO-247-3 providing mechanical and thermal shielding. Enclosure type TO-247-3 ensuring device integrity. Highest power dissipation 320W (Tc) for effective thermal control. Product condition Obsolete for availability and lifecycle. Peak Rds(on) at Id 164 nC @ 10 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 45mOhm @ 30A, 10V for MOSFET criteria. Product or component classification series STripFET™. Manufacturer package type TO-247-3 for component choice. Classification for tariffs Tariff may apply if shipping to the United States regarding import/export. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vce(on) at Vge Tariff may apply if shipping to the United States for transistor parameters. Peak Vgs ±20V for MOSFET parameters. Peak Vgs(th) at Id 4V @ 250µA for MOSFET threshold level.
