STW77N65M5

Description

Measures resistance at forward current Tariff may apply if shipping to the United States for LED or diode evaluation. Supports a continuous drain current (Id) of 69A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 650 V. Accommodates drive voltage specified at 10V for RdsOn regulation. Accommodates FET classification identified as N-Channel. Guarantees maximum 200 nC @ 10 V gate charge at Vgs for enhanced switching efficiency. Upholds 200 nC @ 10 V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 9800 pF @ 100 V at Vds for safeguarding the device. The input capacitance is rated at 9800 pF @ 100 V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Operating temperature 150°C (TJ) for thermal stability. Enclosure Tube for component protection or transport. Enclosure/case TO-247-3 providing mechanical and thermal shielding. Enclosure type TO-247-3 ensuring device integrity. Highest power dissipation 400W (Tc) for effective thermal control. Product condition Active for availability and lifecycle. Peak Rds(on) at Id 200 nC @ 10 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 38mOhm @ 34.5A, 10V for MOSFET criteria. Product or component classification series MDmesh™ V. Manufacturer package type TO-247-3 for component choice. Classification for tariffs Tariff may apply if shipping to the United States regarding import/export. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vce(on) at Vge Tariff may apply if shipping to the United States for transistor parameters. Peak Vgs 25V for MOSFET parameters. Peak Vgs(th) at Id 5V @ 250µA for MOSFET threshold level.