Attribute
Description
Manufacturer Part Number
MRFG35002N6R5
Manufacturer
Description
TRANSISTOR RF 1.5W 6V POWER FET
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | pHEMT FET | |
| Oscillation Rate Hz | 3.55GHz | |
| Amplification Factor | 10dB | |
| Test Condition Voltage | 6V | |
| Rated Current | 1.7A | |
| Signal-to-Noise Degradation | - | |
| Testing Current Value | 65mA | |
| Output Wattage Rating | 1.5W | |
| Rated Operating Voltage | 8V | |
| Component Housing Style | PLD-1.5 |
Description
Measures resistance at forward current 10dB for LED or diode evaluation. Evaluated at current levels indicated by 65mA. Provides a current rating of 1.7A. Operates at a frequency of 3.55GHz. Delivers 10dB gain to improve signal amplification efficiency. Enclosure/case PLD-1.5 providing mechanical and thermal shielding. Power output 1.5W for optimal device performance. Type of transistor pHEMT FET for circuit architecture. Peak Vce(on) at Vge 10dB for transistor parameters. Operating voltage rating 8V for device specifications. Voltage for testing 6V for component assessment.
