Attribute
Description
Manufacturer Part Number
MRFG35003NR5
Manufacturer
Description
TRANSISTOR RF 3W 12V POWER FET
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | pHEMT FET | |
| Oscillation Rate Hz | 3.55GHz | |
| Amplification Factor | 11.5dB | |
| Test Condition Voltage | 12V | |
| Rated Current | 1.3A | |
| Signal-to-Noise Degradation | - | |
| Testing Current Value | 55mA | |
| Output Wattage Rating | 3W | |
| Rated Operating Voltage | 15V | |
| Component Housing Style | PLD-1.5 |
Description
Measures resistance at forward current 11.5dB for LED or diode evaluation. Evaluated at current levels indicated by 55mA. Provides a current rating of 1.3A. Operates at a frequency of 3.55GHz. Delivers 11.5dB gain to improve signal amplification efficiency. Enclosure/case PLD-1.5 providing mechanical and thermal shielding. Power output 3W for optimal device performance. Type of transistor pHEMT FET for circuit architecture. Peak Vce(on) at Vge 11.5dB for transistor parameters. Operating voltage rating 15V for device specifications. Voltage for testing 12V for component assessment.
