Stock: 6
Distributor: 150
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 76.54 | ₹ 76.54 |
| 100 | ₹ 64.08 | ₹ 6,408.00 |
| 500 | ₹ 56.96 | ₹ 28,480.00 |
| 1000 | ₹ 55.18 | ₹ 55,180.00 |
Stock: 9832
Distributor: 108
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 178.89 | ₹ 178.89 |
| 10 | ₹ 114.81 | ₹ 1,148.10 |
| 100 | ₹ 79.21 | ₹ 7,921.00 |
| 500 | ₹ 67.11 | ₹ 33,555.00 |
| 1000 | ₹ 56.07 | ₹ 56,070.00 |
| 2500 | ₹ 51.80 | ₹ 1,29,500.00 |
| 5000 | ₹ 46.64 | ₹ 2,33,200.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 25V | |
| Continuous Drain Current at 25C | 33A (Ta), 100A (Tc) | |
| Max On-State Resistance | 1.4 mOhm @ 30A, 10V | |
| Max Threshold Gate Voltage | 2V @ 250µA | |
| Gate Charge at Vgs | 39nC @ 10V | |
| Input Cap at Vds | 2700pF @ 12V | |
| Maximum Power Handling | 74W | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 8-PowerTDFN |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 33A (Ta), 100A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 25V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 39nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 2700pF @ 12V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case 8-PowerTDFN providing mechanical and thermal shielding. Peak power 74W for device protection. Peak Rds(on) at Id 39nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 1.4 mOhm @ 30A, 10V for MOSFET criteria. Peak Vgs(th) at Id 2V @ 250µA for MOSFET threshold level.
