Stock: 50
Distributor: 150
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 96.12 | ₹ 96.12 |
| 100 | ₹ 80.10 | ₹ 8,010.00 |
| 500 | ₹ 71.20 | ₹ 35,600.00 |
| 1000 | ₹ 69.42 | ₹ 69,420.00 |
Stock: 7568
Distributor: 108
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 131.72 | ₹ 131.72 |
| 10 | ₹ 92.56 | ₹ 925.60 |
| 100 | ₹ 76.90 | ₹ 7,690.00 |
| 500 | ₹ 72.62 | ₹ 36,310.00 |
| 5000 | ₹ 61.77 | ₹ 3,08,850.00 |
| 10000 | ₹ 52.06 | ₹ 5,20,600.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 25V | |
| Continuous Drain Current at 25C | 39A (Ta), 100A (Tc) | |
| Max On-State Resistance | 1 mOhm @ 30A, 10V | |
| Max Threshold Gate Voltage | 2V @ 250µA | |
| Gate Charge at Vgs | 64nC @ 10V | |
| Input Cap at Vds | 4700pF @ 12V | |
| Maximum Power Handling | 2.5W | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 8-PowerTDFN |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 39A (Ta), 100A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 25V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 64nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 4700pF @ 12V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case 8-PowerTDFN providing mechanical and thermal shielding. Peak power 2.5W for device protection. Peak Rds(on) at Id 64nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 1 mOhm @ 30A, 10V for MOSFET criteria. Peak Vgs(th) at Id 2V @ 250µA for MOSFET threshold level.
