Stock: 7075
Distributor: 108
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 134.39 | ₹ 134.39 |
| 10 | ₹ 84.19 | ₹ 841.90 |
| 100 | ₹ 55.89 | ₹ 5,589.00 |
| 500 | ₹ 44.14 | ₹ 22,070.00 |
| 1000 | ₹ 39.78 | ₹ 39,780.00 |
| 2500 | ₹ 37.56 | ₹ 93,900.00 |
| 5000 | ₹ 31.77 | ₹ 1,58,850.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 40V | |
| Continuous Drain Current at 25C | 24A (Ta), 100A (Tc) | |
| Max On-State Resistance | 2.7 mOhm @ 50A, 10V | |
| Max Threshold Gate Voltage | 2V @ 49µA | |
| Gate Charge at Vgs | 85nC @ 10V | |
| Input Cap at Vds | 6800pF @ 20V | |
| Maximum Power Handling | 83W | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 8-PowerTDFN |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 24A (Ta), 100A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 40V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 85nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 6800pF @ 20V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case 8-PowerTDFN providing mechanical and thermal shielding. Peak power 83W for device protection. Peak Rds(on) at Id 85nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 2.7 mOhm @ 50A, 10V for MOSFET criteria. Peak Vgs(th) at Id 2V @ 49µA for MOSFET threshold level.
