Stock: 227
Distributor: 108
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 188.68 | ₹ 188.68 |
| 10 | ₹ 121.04 | ₹ 1,210.40 |
| 100 | ₹ 83.48 | ₹ 8,348.00 |
| 500 | ₹ 70.76 | ₹ 35,380.00 |
| 1000 | ₹ 60.16 | ₹ 60,160.00 |
| 5000 | ₹ 51.00 | ₹ 2,55,000.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 100V | |
| Continuous Drain Current at 25C | 8A (Ta), 40A (Tc) | |
| Max On-State Resistance | 16 mOhm @ 20A, 10V | |
| Max Threshold Gate Voltage | 3.5V @ 12µA | |
| Gate Charge at Vgs | 25nC @ 10V | |
| Input Cap at Vds | 1700pF @ 50V | |
| Maximum Power Handling | 63W | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 8-PowerTDFN |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 8A (Ta), 40A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 100V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 25nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 1700pF @ 50V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case 8-PowerTDFN providing mechanical and thermal shielding. Peak power 63W for device protection. Peak Rds(on) at Id 25nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 16 mOhm @ 20A, 10V for MOSFET criteria. Peak Vgs(th) at Id 3.5V @ 12µA for MOSFET threshold level.
