Attribute
Description
Manufacturer Part Number
IPD50R1K4CE
Manufacturer
Description
MOSFET
Manufacturer Lead Time
16 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 500V | |
| Continuous Drain Current at 25C | 3.1A | |
| Max On-State Resistance | - | |
| Max Threshold Gate Voltage | - | |
| Gate Charge at Vgs | 1nC @ 10V | |
| Input Cap at Vds | - | |
| Maximum Power Handling | 25W | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 3.1A at 25°C. Supports Vdss drain-to-source voltage rated at 500V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 1nC @ 10V gate charge at Vgs for reliable MOSFET functionality. Mounting style Surface Mount for structural integrity. Enclosure/case TO-252-3, DPak (2 Leads + Tab), SC-63 providing mechanical and thermal shielding. Peak power 25W for device protection. Peak Rds(on) at Id 1nC @ 10V for MOSFET efficiency.
