Stock: 10000
Distributor: 145
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1000 | ₹ 26.80 | ₹ 26,800.00 |
| 745 | ₹ 29.90 | ₹ 22,275.50 |
| 580 | ₹ 30.92 | ₹ 17,933.60 |
| 420 | ₹ 31.95 | ₹ 13,419.00 |
| 270 | ₹ 32.98 | ₹ 8,904.60 |
| 115 | ₹ 40.19 | ₹ 4,621.85 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 500V | |
| Continuous Drain Current at 25C | 4.3A | |
| Max On-State Resistance | 950 mOhm @ 1.2A, 13V | |
| Max Threshold Gate Voltage | 3.5V @ 100µA | |
| Gate Charge at Vgs | 10.5nC @ 10V | |
| Input Cap at Vds | 231pF @ 100V | |
| Maximum Power Handling | 34W | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 4.3A at 25°C. Supports Vdss drain-to-source voltage rated at 500V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 10.5nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 231pF @ 100V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case TO-252-3, DPak (2 Leads + Tab), SC-63 providing mechanical and thermal shielding. Peak power 34W for device protection. Peak Rds(on) at Id 10.5nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 950 mOhm @ 1.2A, 13V for MOSFET criteria. Peak Vgs(th) at Id 3.5V @ 100µA for MOSFET threshold level.
