Stock: 405
Distributor: 58
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 2500 | ₹ 148.09 | ₹ 3,70,225.00 |
| 1250 | ₹ 151.85 | ₹ 1,89,812.50 |
| 500 | ₹ 155.96 | ₹ 77,980.00 |
| 250 | ₹ 160.09 | ₹ 40,022.50 |
| 50 | ₹ 162.33 | ₹ 8,116.50 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 60V | |
| Continuous Drain Current at 25C | 29A (Ta), 120A (Tc) | |
| Max On-State Resistance | 2 mOhm @ 100A, 10V | |
| Max Threshold Gate Voltage | 2.8V @ 143µA | |
| Gate Charge at Vgs | 106nC @ 10V | |
| Input Cap at Vds | 7800pF @ 30V | |
| Maximum Power Handling | 3W | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-220-3 |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 29A (Ta), 120A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 60V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 106nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 7800pF @ 30V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Enclosure/case TO-220-3 providing mechanical and thermal shielding. Peak power 3W for device protection. Peak Rds(on) at Id 106nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 2 mOhm @ 100A, 10V for MOSFET criteria. Peak Vgs(th) at Id 2.8V @ 143µA for MOSFET threshold level.
