IPP034NE7N3 G
Data Sheet
Stock: 293
Distributor: 108
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 377.36 | ₹ 377.36 |
| 10 | ₹ 194.02 | ₹ 1,940.20 |
| 500 | ₹ 144.18 | ₹ 72,090.00 |
| 1000 | ₹ 135.28 | ₹ 1,35,280.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 75V | |
| Continuous Drain Current at 25C | 100A (Tc) | |
| Max On-State Resistance | 3.4 mOhm @ 100A, 10V | |
| Max Threshold Gate Voltage | 3.8V @ 155µA | |
| Gate Charge at Vgs | 117nC @ 10V | |
| Input Cap at Vds | 8130pF @ 37.5V | |
| Maximum Power Handling | 214W | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-220-3 |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 100A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 75V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 117nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 8130pF @ 37.5V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Enclosure/case TO-220-3 providing mechanical and thermal shielding. Peak power 214W for device protection. Peak Rds(on) at Id 117nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 3.4 mOhm @ 100A, 10V for MOSFET criteria. Peak Vgs(th) at Id 3.8V @ 155µA for MOSFET threshold level.
