IPP041N04N G
Data Sheet
Stock: 645
Distributor: 108
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 145.96 | ₹ 145.96 |
| 10 | ₹ 68.71 | ₹ 687.10 |
| 100 | ₹ 61.32 | ₹ 6,132.00 |
| 500 | ₹ 51.53 | ₹ 25,765.00 |
| 1000 | ₹ 41.12 | ₹ 41,120.00 |
| 5000 | ₹ 37.29 | ₹ 1,86,450.00 |
| 10000 | ₹ 35.78 | ₹ 3,57,800.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 40V | |
| Continuous Drain Current at 25C | 80A (Tc) | |
| Max On-State Resistance | 4.1 mOhm @ 80A, 10V | |
| Max Threshold Gate Voltage | 4V @ 45µA | |
| Gate Charge at Vgs | 56nC @ 10V | |
| Input Cap at Vds | 4500pF @ 20V | |
| Maximum Power Handling | 94W | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-220-3 |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 80A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 40V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 56nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 4500pF @ 20V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Enclosure/case TO-220-3 providing mechanical and thermal shielding. Peak power 94W for device protection. Peak Rds(on) at Id 56nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 4.1 mOhm @ 80A, 10V for MOSFET criteria. Peak Vgs(th) at Id 4V @ 45µA for MOSFET threshold level.
