Stock: 200
Distributor: 58
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1000 | ₹ 95.82 | ₹ 95,820.00 |
| 500 | ₹ 102.31 | ₹ 51,155.00 |
| 250 | ₹ 108.76 | ₹ 27,190.00 |
| 100 | ₹ 115.23 | ₹ 11,523.00 |
| 50 | ₹ 121.69 | ₹ 6,084.50 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 40V | |
| Continuous Drain Current at 25C | 70A (Tc) | |
| Max On-State Resistance | 4.8 mOhm @ 70A, 10V | |
| Max Threshold Gate Voltage | 4V @ 200µA | |
| Gate Charge at Vgs | 41nC @ 10V | |
| Input Cap at Vds | 3300pF @ 25V | |
| Maximum Power Handling | 79W | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-220-3 |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 70A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 40V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 41nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 3300pF @ 25V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Enclosure/case TO-220-3 providing mechanical and thermal shielding. Peak power 79W for device protection. Peak Rds(on) at Id 41nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 4.8 mOhm @ 70A, 10V for MOSFET criteria. Peak Vgs(th) at Id 4V @ 200µA for MOSFET threshold level.
