Stock: 305
Distributor: 108
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 315.06 | ₹ 315.06 |
| 10 | ₹ 296.37 | ₹ 2,963.70 |
| 100 | ₹ 268.78 | ₹ 26,878.00 |
| 240 | ₹ 250.09 | ₹ 60,021.60 |
| 480 | ₹ 218.94 | ₹ 1,05,091.20 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 650V | |
| Continuous Drain Current at 25C | 20.7A (Tc) | |
| Max On-State Resistance | 220 mOhm @ 13.1A, 10V | |
| Max Threshold Gate Voltage | 5V @ 1mA | |
| Gate Charge at Vgs | 124nC @ 10V | |
| Input Cap at Vds | 2400pF @ 25V | |
| Maximum Power Handling | 208W | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-247-3 |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 20.7A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 650V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 124nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 2400pF @ 25V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Enclosure/case TO-247-3 providing mechanical and thermal shielding. Peak power 208W for device protection. Peak Rds(on) at Id 124nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 220 mOhm @ 13.1A, 10V for MOSFET criteria. Peak Vgs(th) at Id 5V @ 1mA for MOSFET threshold level.
