Stock: 14
Distributor: 118
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 6 | ₹ 345.44 | ₹ 2,072.64 |
| 2 | ₹ 460.57 | ₹ 921.14 |
| 1 | ₹ 690.86 | ₹ 690.86 |
Stock: 211
Distributor: 108
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 541.12 | ₹ 541.12 |
| 25 | ₹ 308.83 | ₹ 7,720.75 |
| 100 | ₹ 257.21 | ₹ 25,721.00 |
| 240 | ₹ 256.32 | ₹ 61,516.80 |
| 480 | ₹ 242.08 | ₹ 1,16,198.40 |
| 1200 | ₹ 241.19 | ₹ 2,89,428.00 |
| 2640 | ₹ 240.30 | ₹ 6,34,392.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 650V | |
| Continuous Drain Current at 25C | 24.3A (Tc) | |
| Max On-State Resistance | 160 mOhm @ 15.4A, 10V | |
| Max Threshold Gate Voltage | 3.9V @ 1.2mA | |
| Gate Charge at Vgs | 135nC @ 10V | |
| Input Cap at Vds | 3000pF @ 25V | |
| Maximum Power Handling | 240W | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-247-3 |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 24.3A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 650V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 135nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 3000pF @ 25V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Enclosure/case TO-247-3 providing mechanical and thermal shielding. Peak power 240W for device protection. Peak Rds(on) at Id 135nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 160 mOhm @ 15.4A, 10V for MOSFET criteria. Peak Vgs(th) at Id 3.9V @ 1.2mA for MOSFET threshold level.
