SPW35N60C3
Data Sheet
Stock: 105
Distributor: 58
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1500 | ₹ 388.35 | ₹ 5,82,525.00 |
| 750 | ₹ 400.36 | ₹ 3,00,270.00 |
| 300 | ₹ 411.71 | ₹ 1,23,513.00 |
| 150 | ₹ 435.04 | ₹ 65,256.00 |
| 30 | ₹ 443.89 | ₹ 13,316.70 |
Stock: 195
Distributor: 108
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 866.86 | ₹ 866.86 |
| 10 | ₹ 657.71 | ₹ 6,577.10 |
| 100 | ₹ 548.24 | ₹ 54,824.00 |
| 480 | ₹ 487.72 | ₹ 2,34,105.60 |
| 1200 | ₹ 434.32 | ₹ 5,21,184.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 650V | |
| Continuous Drain Current at 25C | 34.6A (Tc) | |
| Max On-State Resistance | 100 mOhm @ 21.9A, 10V | |
| Max Threshold Gate Voltage | 3.9V @ 1.9mA | |
| Gate Charge at Vgs | 200nC @ 10V | |
| Input Cap at Vds | 4500pF @ 25V | |
| Maximum Power Handling | 313W | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-247-3 |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 34.6A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 650V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 200nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 4500pF @ 25V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Enclosure/case TO-247-3 providing mechanical and thermal shielding. Peak power 313W for device protection. Peak Rds(on) at Id 200nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 100 mOhm @ 21.9A, 10V for MOSFET criteria. Peak Vgs(th) at Id 3.9V @ 1.9mA for MOSFET threshold level.
