Attribute
Description
Manufacturer Part Number
BSS123,215
Manufacturer
Description
N CHANNEL MOSFET,
150MA,
100V,...
Note :
GST will not be applied to orders shipping outside of India
Stock: 3
Distributor: 160
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 100000 | ₹ 3.17 | ₹ 3,17,000.00 |
| 10000 | ₹ 3.78 | ₹ 37,800.00 |
| 1000 | ₹ 4.24 | ₹ 4,240.00 |
| 500 | ₹ 4.60 | ₹ 2,300.00 |
| 100 | ₹ 5.11 | ₹ 511.00 |
Stock: 3
Distributor: 135
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 100000 | ₹ 3.17 | ₹ 3,17,000.00 |
| 10000 | ₹ 3.78 | ₹ 37,800.00 |
| 1000 | ₹ 4.24 | ₹ 4,240.00 |
| 500 | ₹ 4.60 | ₹ 2,300.00 |
| 100 | ₹ 5.11 | ₹ 511.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 100V | |
| Continuous Drain Current at 25C | 150mA | |
| Max On-State Resistance | 6 Ohm @ 120mA, 10V | |
| Max Threshold Gate Voltage | 2.8V @ 1mA | |
| Gate Charge at Vgs | - | |
| Input Cap at Vds | 40pF @ 25V | |
| Maximum Power Handling | 250mW | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | TO-236-3, SC-59, SOT-23-3 |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 150mA at 25°C. Supports Vdss drain-to-source voltage rated at 100V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. The input capacitance is rated at 40pF @ 25V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case TO-236-3, SC-59, SOT-23-3 providing mechanical and thermal shielding. Peak power 250mW for device protection. Peak Rds(on) at Id and Vgs 6 Ohm @ 120mA, 10V for MOSFET criteria. Peak Vgs(th) at Id 2.8V @ 1mA for MOSFET threshold level.