Stock: 4973
Distributor: 135
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 10000 | ₹ 119.26 | ₹ 11,92,600.00 |
| 1000 | ₹ 127.27 | ₹ 1,27,270.00 |
| 500 | ₹ 134.39 | ₹ 67,195.00 |
| 100 | ₹ 142.40 | ₹ 14,240.00 |
| 25 | ₹ 149.52 | ₹ 3,738.00 |
Stock: 4973
Distributor: 160
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 10000 | ₹ 131.72 | ₹ 13,17,200.00 |
| 1000 | ₹ 139.73 | ₹ 1,39,730.00 |
| 500 | ₹ 148.63 | ₹ 74,315.00 |
| 100 | ₹ 156.64 | ₹ 15,664.00 |
| 25 | ₹ 164.65 | ₹ 4,116.25 |
Stock: 4973
Distributor: 111
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 10000 | ₹ 164.65 | ₹ 16,46,500.00 |
| 1000 | ₹ 174.66 | ₹ 1,74,660.00 |
| 500 | ₹ 185.79 | ₹ 92,895.00 |
| 171 | ₹ 195.80 | ₹ 33,481.80 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 55V | |
| Continuous Drain Current at 25C | 120A | |
| Max On-State Resistance | 3.2 mOhm @ 25A, 10V | |
| Max Threshold Gate Voltage | 2.8V @ 1mA | |
| Gate Charge at Vgs | 258nC @ 10V | |
| Input Cap at Vds | 15300pF @ 25V | |
| Maximum Power Handling | 306W | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-262-3 Long Leads, I²Pak, TO-262AA |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 120A at 25°C. Supports Vdss drain-to-source voltage rated at 55V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 258nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 15300pF @ 25V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Enclosure/case TO-262-3 Long Leads, I²Pak, TO-262AA providing mechanical and thermal shielding. Peak power 306W for device protection. Peak Rds(on) at Id 258nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 3.2 mOhm @ 25A, 10V for MOSFET criteria. Peak Vgs(th) at Id 2.8V @ 1mA for MOSFET threshold level.
