Stock: 300
Distributor: 135
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 10000 | ₹ 174.44 | ₹ 17,44,400.00 |
| 1000 | ₹ 185.12 | ₹ 1,85,120.00 |
| 500 | ₹ 196.69 | ₹ 98,345.00 |
| 100 | ₹ 207.37 | ₹ 20,737.00 |
| 25 | ₹ 218.05 | ₹ 5,451.25 |
Stock: 300
Distributor: 160
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 10000 | ₹ 194.02 | ₹ 19,40,200.00 |
| 1000 | ₹ 206.48 | ₹ 2,06,480.00 |
| 500 | ₹ 218.94 | ₹ 1,09,470.00 |
| 100 | ₹ 230.51 | ₹ 23,051.00 |
| 25 | ₹ 242.97 | ₹ 6,074.25 |
Stock: 300
Distributor: 111
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 10000 | ₹ 242.53 | ₹ 24,25,300.00 |
| 1000 | ₹ 258.10 | ₹ 2,58,100.00 |
| 500 | ₹ 273.68 | ₹ 1,36,840.00 |
| 116 | ₹ 288.14 | ₹ 33,424.24 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 40V | |
| Continuous Drain Current at 25C | 100A | |
| Max On-State Resistance | 2.8 mOhm @ 25A, 10V | |
| Max Threshold Gate Voltage | 2V @ 1mA | |
| Gate Charge at Vgs | 94nC @ 5V | |
| Input Cap at Vds | 10502pF @ 25V | |
| Maximum Power Handling | 300W | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-262-3 Long Leads, I²Pak, TO-262AA |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 100A at 25°C. Supports Vdss drain-to-source voltage rated at 40V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 94nC @ 5V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 10502pF @ 25V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Enclosure/case TO-262-3 Long Leads, I²Pak, TO-262AA providing mechanical and thermal shielding. Peak power 300W for device protection. Peak Rds(on) at Id 94nC @ 5V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 2.8 mOhm @ 25A, 10V for MOSFET criteria. Peak Vgs(th) at Id 2V @ 1mA for MOSFET threshold level.
