Attribute
Description
Manufacturer Part Number
2N5457G
Manufacturer
Description
Junction Field Effect Transistors,
25V,
310mW
Manufacturer Lead Time
Not specified
Our team will assist you shortly.
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | N-Channel | |
| Breakdown VBR GSS | 25V | |
| Drain-Source Breakdown Volts | 25V | |
| Drain Current at Vds | 1mA @ 15V | |
| Drain Current Id | - | |
| Cutoff VGS at Id | 500mV @ 10nA | |
| Maximum Power Handling | 310mW | |
| Input Cap at Vds | 7pF @ 15V | |
| RDS On Resistance | - | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-226-3, TO-92-3 (TO-226AA) |
Description
Measures resistance at forward current N-Channel for LED or diode evaluation. Supports a drain current Idss at Vds measured at 1mA @ 15V. Supports Vdss drain-to-source voltage rated at 25V. Accommodates FET classification identified as N-Channel. The input capacitance is rated at 7pF @ 15V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Enclosure/case TO-226-3, TO-92-3 (TO-226AA) providing mechanical and thermal shielding. Peak power 310mW for device protection. Peak Rds(on) at Id 500mV @ 10nA for MOSFET efficiency. V(BR)GSS breakdown level 25V for semiconductors. Cutoff voltage VGS off at Id 500mV @ 10nA for MOSFETs.
