Attribute
Description
Manufacturer Part Number
J110G
Manufacturer
Description
Junction Field Effect Transistors,
25V,
310mW
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | N-Channel | |
| Breakdown VBR GSS | 25V | |
| Drain-Source Breakdown Volts | - | |
| Drain Current at Vds | 10mA @ 15V | |
| Drain Current Id | - | |
| Cutoff VGS at Id | 500mV @ 1µA | |
| Maximum Power Handling | 310mW | |
| Input Cap at Vds | - | |
| RDS On Resistance | 18 Ohm | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-226-3, TO-92-3 (TO-226AA) |
Description
Measures resistance at forward current N-Channel for LED or diode evaluation. Supports a drain current Idss at Vds measured at 10mA @ 15V. Accommodates FET classification identified as N-Channel. Mounting style Through Hole for structural integrity. Resistance in the on-state 18 Ohm for efficient conduction. Enclosure/case TO-226-3, TO-92-3 (TO-226AA) providing mechanical and thermal shielding. Peak power 310mW for device protection. Peak Rds(on) at Id 500mV @ 1µA for MOSFET efficiency. RDS(on) resistance value 18 Ohm for MOSFET operation. V(BR)GSS breakdown level 25V for semiconductors. Cutoff voltage VGS off at Id 500mV @ 1µA for MOSFETs.
