MMDT2222V-TP
Data Sheet
Attribute
Description
Manufacturer Part Number
MMDT2222V-TP
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
2 NPN (Dual),...
Manufacturer Lead Time
18 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | 2 NPN (Dual) | |
| Maximum Collector Amps | 600mA | |
| Max Collector-Emitter Breakdown | 40V | |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA | |
| Collector Cutoff Max | - | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V | |
| Maximum Power Handling | 150mW | |
| Transition Freq | 300MHz | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | SOT-563, SOT-666 |
Description
Provides a maximum collector current (Ic) of 600mA. Features a DC current gain hFE at Ic evaluated at 1V @ 50mA, 500mA. Offers 300MHz transition frequency for seamless signal modulation. Mounting style Surface Mount for structural integrity. Enclosure/case SOT-563, SOT-666 providing mechanical and thermal shielding. Peak power 150mW for device protection. Type of transistor 2 NPN (Dual) for circuit architecture. Peak Vce(on) at Vge 1V @ 50mA, 500mA for transistor parameters. Highest collector-emitter breakdown voltage 40V.
