Attribute
Description
Manufacturer Part Number
BC858CDXV6T5G
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
2 PNP (Dual),...
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | 2 PNP (Dual) | |
| Maximum Collector Amps | 100mA | |
| Max Collector-Emitter Breakdown | 30V | |
| Vce Saturation (Max) @ Ib, Ic | 650mV @ 5mA, 100mA | |
| Collector Cutoff Max | - | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 420 @ 2mA, 5V | |
| Maximum Power Handling | 500mW | |
| Transition Freq | 100MHz | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | SOT-563, SOT-666 |
Description
Provides a maximum collector current (Ic) of 100mA. Features a DC current gain hFE at Ic evaluated at 650mV @ 5mA, 100mA. Offers 100MHz transition frequency for seamless signal modulation. Mounting style Surface Mount for structural integrity. Enclosure/case SOT-563, SOT-666 providing mechanical and thermal shielding. Peak power 500mW for device protection. Type of transistor 2 PNP (Dual) for circuit architecture. Peak Vce(on) at Vge 650mV @ 5mA, 100mA for transistor parameters. Highest collector-emitter breakdown voltage 30V.
