Attribute
Description
Manufacturer Part Number
2N4921
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
NPN,
1A,
40V
Manufacturer Lead Time
Not specified
Our team will assist you shortly.
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Maximum Collector Amps | 1A | |
| Max Collector-Emitter Breakdown | 40V | |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 100mA, 1A | |
| Collector Cutoff Max | - | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 500mA, 1V | |
| Maximum Power Handling | 30W | |
| Transition Freq | 3MHz | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-225AA, TO-126-3 |
Description
Provides a maximum collector current (Ic) of 1A. Features a DC current gain hFE at Ic evaluated at 600mV @ 100mA, 1A. Offers 3MHz transition frequency for seamless signal modulation. Mounting style Through Hole for structural integrity. Enclosure/case TO-225AA, TO-126-3 providing mechanical and thermal shielding. Peak power 30W for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 600mV @ 100mA, 1A for transistor parameters. Highest collector-emitter breakdown voltage 40V.
