Attribute
Description
Manufacturer Part Number
2N2222A
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
NPN,
600mA,...
Note :
GST will not be applied to orders shipping outside of India
Stock: 1
Distributor: 132
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 36.49 | ₹ 36.49 |
| 100 | ₹ 36.49 | ₹ 3,649.00 |
| 1000 | ₹ 36.49 | ₹ 36,490.00 |
| 10000 | ₹ 36.49 | ₹ 3,64,900.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Maximum Collector Amps | 600mA | |
| Max Collector-Emitter Breakdown | 40V | |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 150mA | |
| Collector Cutoff Max | - | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V | |
| Maximum Power Handling | 500mW | |
| Transition Freq | 300MHz | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-206AA, TO-18-3 Metal Can |
Description
Provides a maximum collector current (Ic) of 600mA. Features a DC current gain hFE at Ic evaluated at 1V @ 50mA, 150mA. Offers 300MHz transition frequency for seamless signal modulation. Mounting style Through Hole for structural integrity. Enclosure/case TO-206AA, TO-18-3 Metal Can providing mechanical and thermal shielding. Peak power 500mW for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 1V @ 50mA, 150mA for transistor parameters. Highest collector-emitter breakdown voltage 40V.
