Attribute
Description
Manufacturer Part Number
2SCR513PT100
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
NPN,
1A,
50V
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Maximum Collector Amps | 1A | |
| Max Collector-Emitter Breakdown | 50V | |
| Vce Saturation (Max) @ Ib, Ic | 350mV @ 25mA, 500mA | |
| Collector Cutoff Max | 1µA (ICBO) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 50mA, 2V | |
| Maximum Power Handling | 2W | |
| Transition Freq | 360MHz | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | TO-243AA |
Description
Measures resistance at forward current 1µA (ICBO) for LED or diode evaluation. Provides a maximum collector current (Ic) of 1A. Offers a collector cutoff current rated at 1µA (ICBO). Features a DC current gain hFE at Ic evaluated at 350mV @ 25mA, 500mA. Offers 360MHz transition frequency for seamless signal modulation. Mounting style Surface Mount for structural integrity. Enclosure/case TO-243AA providing mechanical and thermal shielding. Peak power 2W for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 350mV @ 25mA, 500mA for transistor parameters. Highest collector-emitter breakdown voltage 50V.
