2SA1667

2SA1667

Data Sheet

Attribute
Description
Manufacturer Part Number
2SA1667
Description
Transistors - Bipolar (BJT) -Single & Arrays, PNP, 2A, 150V
Note : GST will not be applied to orders shipping outside of India

Stock:
900

Distributor: 128

Lead Time: Not specified

Quantity Unit Price Ext. Price
16000 ₹ 66.52 ₹ 10,64,320.00
4000 ₹ 71.68 ₹ 2,86,720.00
2000 ₹ 72.82 ₹ 1,45,640.00
1000 ₹ 76.84 ₹ 76,840.00
500 ₹ 84.29 ₹ 42,145.00
200 ₹ 99.77 ₹ 19,954.00
100 ₹ 104.94 ₹ 10,494.00
50 ₹ 146.22 ₹ 7,311.00
10 ₹ 155.40 ₹ 1,554.00
1 ₹ 241.98 ₹ 241.98

Product Attributes

Type Description
Category
Transistor Class PNP
Maximum Collector Amps 2A
Max Collector-Emitter Breakdown 150V
Vce Saturation (Max) @ Ib, Ic 1V @ 70mA, 700mA
Collector Cutoff Max 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 700mA, 10V
Maximum Power Handling 25W
Transition Freq 20MHz
Attachment Mounting Style Through Hole
Component Housing Style TO-220-3 Full Pack

Description

Measures resistance at forward current 10µA (ICBO) for LED or diode evaluation. Provides a maximum collector current (Ic) of 2A. Offers a collector cutoff current rated at 10µA (ICBO). Features a DC current gain hFE at Ic evaluated at 1V @ 70mA, 700mA. Offers 20MHz transition frequency for seamless signal modulation. Mounting style Through Hole for structural integrity. Enclosure/case TO-220-3 Full Pack providing mechanical and thermal shielding. Peak power 25W for device protection. Type of transistor PNP for circuit architecture. Peak Vce(on) at Vge 1V @ 70mA, 700mA for transistor parameters. Highest collector-emitter breakdown voltage 150V.

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