2SC3851
Data Sheet
Attribute
Description
Manufacturer Part Number
2SC3851
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
NPN,
4A,
60V
Manufacturer Lead Time
Not specified
Our team will assist you shortly.
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Maximum Collector Amps | 4A | |
| Max Collector-Emitter Breakdown | 60V | |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 2A | |
| Collector Cutoff Max | 100µA (ICBO) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 1A, 4V | |
| Maximum Power Handling | 25W | |
| Transition Freq | 15MHz | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-220-3 Full Pack |
Description
Measures resistance at forward current 100µA (ICBO) for LED or diode evaluation. Provides a maximum collector current (Ic) of 4A. Offers a collector cutoff current rated at 100µA (ICBO). Features a DC current gain hFE at Ic evaluated at 500mV @ 200mA, 2A. Offers 15MHz transition frequency for seamless signal modulation. Mounting style Through Hole for structural integrity. Enclosure/case TO-220-3 Full Pack providing mechanical and thermal shielding. Peak power 25W for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 500mV @ 200mA, 2A for transistor parameters. Highest collector-emitter breakdown voltage 60V.
