Attribute
Description
Manufacturer Part Number
2N5192
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
NPN,
4A,
80V
Note :
GST will not be applied to orders shipping outside of India
Stock: 1
Distributor: 121
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 200.14 | ₹ 200.14 |
| 10 | ₹ 116.08 | ₹ 1,160.80 |
| 100 | ₹ 94.12 | ₹ 9,412.00 |
| 500 | ₹ 76.75 | ₹ 38,375.00 |
| 1000 | ₹ 65.44 | ₹ 65,440.00 |
| 5000 | ₹ 60.88 | ₹ 3,04,400.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Maximum Collector Amps | 4A | |
| Max Collector-Emitter Breakdown | 80V | |
| Vce Saturation (Max) @ Ib, Ic | 1.4V @ 1A, 4A | |
| Collector Cutoff Max | 1mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 1.5A, 2V | |
| Maximum Power Handling | 40W | |
| Transition Freq | - | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-225AA, TO-126-3 |
Description
Measures resistance at forward current 1mA for LED or diode evaluation. Provides a maximum collector current (Ic) of 4A. Offers a collector cutoff current rated at 1mA. Features a DC current gain hFE at Ic evaluated at 1.4V @ 1A, 4A. Mounting style Through Hole for structural integrity. Enclosure/case TO-225AA, TO-126-3 providing mechanical and thermal shielding. Peak power 40W for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 1.4V @ 1A, 4A for transistor parameters. Highest collector-emitter breakdown voltage 80V.
