Attribute
Description
Manufacturer Part Number
2N5195
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
PNP,
4A,
80V
Manufacturer Lead Time
55 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | PNP | |
| Maximum Collector Amps | 4A | |
| Max Collector-Emitter Breakdown | 80V | |
| Vce Saturation (Max) @ Ib, Ic | 1.2V @ 1A, 4A | |
| Collector Cutoff Max | 1mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 1.5A, 2V | |
| Maximum Power Handling | 40W | |
| Transition Freq | 2MHz | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-225AA, TO-126-3 |
Description
Measures resistance at forward current 1mA for LED or diode evaluation. Provides a maximum collector current (Ic) of 4A. Offers a collector cutoff current rated at 1mA. Features a DC current gain hFE at Ic evaluated at 1.2V @ 1A, 4A. Offers 2MHz transition frequency for seamless signal modulation. Mounting style Through Hole for structural integrity. Enclosure/case TO-225AA, TO-126-3 providing mechanical and thermal shielding. Peak power 40W for device protection. Type of transistor PNP for circuit architecture. Peak Vce(on) at Vge 1.2V @ 1A, 4A for transistor parameters. Highest collector-emitter breakdown voltage 80V.
