Attribute
Description
Manufacturer Part Number
2N5415
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
PNP,
1A,
200V
Note :
GST will not be applied to orders shipping outside of India
Stock: 16
Distributor: 125
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1000 | ₹ 133.50 | ₹ 1,33,500.00 |
| 100 | ₹ 153.97 | ₹ 15,397.00 |
| 1 | ₹ 205.59 | ₹ 205.59 |
Stock: 20
Distributor: 157
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 1,321.65 | ₹ 1,321.65 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | PNP | |
| Maximum Collector Amps | 1A | |
| Max Collector-Emitter Breakdown | 200V | |
| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 5mA, 50mA | |
| Collector Cutoff Max | 50µA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 50mA, 10V | |
| Maximum Power Handling | 1W | |
| Transition Freq | 15MHz | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-205AD, TO-39-3 Metal Can |
Description
Measures resistance at forward current 50µA for LED or diode evaluation. Provides a maximum collector current (Ic) of 1A. Offers a collector cutoff current rated at 50µA. Features a DC current gain hFE at Ic evaluated at 2.5V @ 5mA, 50mA. Offers 15MHz transition frequency for seamless signal modulation. Mounting style Through Hole for structural integrity. Enclosure/case TO-205AD, TO-39-3 Metal Can providing mechanical and thermal shielding. Peak power 1W for device protection. Type of transistor PNP for circuit architecture. Peak Vce(on) at Vge 2.5V @ 5mA, 50mA for transistor parameters. Highest collector-emitter breakdown voltage 200V.
