Attribute
Description
Manufacturer Part Number
2N2102
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
NPN,
1A,
65V
Manufacturer Lead Time
55 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Maximum Collector Amps | 1A | |
| Max Collector-Emitter Breakdown | 65V | |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 15mA, 150mA | |
| Collector Cutoff Max | - | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 10V | |
| Maximum Power Handling | 1W | |
| Transition Freq | - | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-205AD, TO-39-3 Metal Can |
Description
Provides a maximum collector current (Ic) of 1A. Features a DC current gain hFE at Ic evaluated at 500mV @ 15mA, 150mA. Mounting style Through Hole for structural integrity. Enclosure/case TO-205AD, TO-39-3 Metal Can providing mechanical and thermal shielding. Peak power 1W for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 500mV @ 15mA, 150mA for transistor parameters. Highest collector-emitter breakdown voltage 65V.
