BULD118D-1

BULD118D-1
Attribute
Description
Manufacturer Part Number
BULD118D-1
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays, NPN, 2A, 400V
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Stock:
19118

Distributor: 121

Lead Time: Not specified

Quantity Unit Price Ext. Price
1 ₹ 73.48 ₹ 73.48
10 ₹ 60.67 ₹ 606.70
100 ₹ 44.12 ₹ 4,412.00
500 ₹ 36.86 ₹ 18,430.00
1000 ₹ 26.40 ₹ 26,400.00
5000 ₹ 24.45 ₹ 1,22,250.00

Stock:
1

Distributor: 142

Lead Time: Not specified


Quantity Unit Price Ext. Price
1 ₹ 111.25 ₹ 111.25
10 ₹ 49.84 ₹ 498.40
100 ₹ 44.50 ₹ 4,450.00
500 ₹ 36.49 ₹ 18,245.00

Product Attributes

Type Description
Category
Transistor Class NPN
Maximum Collector Amps 2A
Max Collector-Emitter Breakdown 400V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 400mA, 2A
Collector Cutoff Max 250µA
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 500mA, 5V
Maximum Power Handling 20W
Transition Freq -
Attachment Mounting Style Through Hole
Component Housing Style TO-251-3 Long Leads, IPak, TO-251AB

Description

Measures resistance at forward current 250µA for LED or diode evaluation. Provides a maximum collector current (Ic) of 2A. Offers a collector cutoff current rated at 250µA. Features a DC current gain hFE at Ic evaluated at 1.5V @ 400mA, 2A. Mounting style Through Hole for structural integrity. Enclosure/case TO-251-3 Long Leads, IPak, TO-251AB providing mechanical and thermal shielding. Peak power 20W for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 1.5V @ 400mA, 2A for transistor parameters. Highest collector-emitter breakdown voltage 400V.

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