Attribute
Description
Manufacturer Part Number
STI13005-1
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
NPN,
3A,
400V
Note :
GST will not be applied to orders shipping outside of India
Stock: 2219
Distributor: 118
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1985 | ₹ 57.67 | ₹ 1,14,474.95 |
| 927 | ₹ 67.28 | ₹ 62,368.56 |
| 1 | ₹ 192.24 | ₹ 192.24 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Maximum Collector Amps | 3A | |
| Max Collector-Emitter Breakdown | 400V | |
| Vce Saturation (Max) @ Ib, Ic | 5V @ 750mA, 3A | |
| Collector Cutoff Max | 1mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 8 @ 2A, 5V | |
| Maximum Power Handling | 30W | |
| Transition Freq | - | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-251-3 Short Leads, IPak, TO-251AA |
Description
Measures resistance at forward current 1mA for LED or diode evaluation. Provides a maximum collector current (Ic) of 3A. Offers a collector cutoff current rated at 1mA. Features a DC current gain hFE at Ic evaluated at 5V @ 750mA, 3A. Mounting style Through Hole for structural integrity. Enclosure/case TO-251-3 Short Leads, IPak, TO-251AA providing mechanical and thermal shielding. Peak power 30W for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 5V @ 750mA, 3A for transistor parameters. Highest collector-emitter breakdown voltage 400V.
