Attribute
Description
Manufacturer Part Number
L603C
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,...
Note :
GST will not be applied to orders shipping outside of India
Stock: 1
Distributor: 121
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 271.98 | ₹ 271.98 |
| 10 | ₹ 180.38 | ₹ 1,803.80 |
| 100 | ₹ 151.39 | ₹ 15,139.00 |
| 500 | ₹ 143.36 | ₹ 71,680.00 |
| 1000 | ₹ 135.21 | ₹ 1,35,210.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | 8 NPN Darlington | |
| Maximum Collector Amps | 400mA | |
| Max Collector-Emitter Breakdown | 90V | |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 500µA, 300mA | |
| Collector Cutoff Max | - | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - | |
| Maximum Power Handling | 1.8W | |
| Transition Freq | - | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | - |
Description
Provides a maximum collector current (Ic) of 400mA. Features a DC current gain hFE at Ic evaluated at 2V @ 500µA, 300mA. Mounting style Through Hole for structural integrity. Peak power 1.8W for device protection. Type of transistor 8 NPN Darlington for circuit architecture. Peak Vce(on) at Vge 2V @ 500µA, 300mA for transistor parameters. Highest collector-emitter breakdown voltage 90V.
