TIP121

TIP121
Attribute
Description
Manufacturer Part Number
TIP121
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,...
Note : GST will not be applied to orders shipping outside of India

Stock:
2681

Distributor: 130

Lead Time: Not specified

Quantity Unit Price Ext. Price
1 ₹ 82.74 ₹ 82.74
10 ₹ 38.13 ₹ 381.30
100 ₹ 33.69 ₹ 3,369.00
500 ₹ 25.93 ₹ 12,965.00
1000 ₹ 21.75 ₹ 21,750.00
5000 ₹ 20.40 ₹ 1,02,000.00

Stock:
2215

Distributor: 142

Lead Time: Not specified


Quantity Unit Price Ext. Price
1 ₹ 84.55 ₹ 84.55
10 ₹ 39.16 ₹ 391.60
100 ₹ 34.71 ₹ 3,471.00
500 ₹ 26.70 ₹ 13,350.00

Product Attributes

Type Description
Category
Transistor Class NPN - Darlington
Maximum Collector Amps 5A
Max Collector-Emitter Breakdown 80V
Vce Saturation (Max) @ Ib, Ic 4V @ 20mA, 5A
Collector Cutoff Max 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 3A, 3V
Maximum Power Handling 2W
Transition Freq -
Attachment Mounting Style Through Hole
Component Housing Style TO-220-3

Description

Measures resistance at forward current 500µA for LED or diode evaluation. Provides a maximum collector current (Ic) of 5A. Offers a collector cutoff current rated at 500µA. Features a DC current gain hFE at Ic evaluated at 4V @ 20mA, 5A. Mounting style Through Hole for structural integrity. Enclosure/case TO-220-3 providing mechanical and thermal shielding. Peak power 2W for device protection. Type of transistor NPN - Darlington for circuit architecture. Peak Vce(on) at Vge 4V @ 20mA, 5A for transistor parameters. Highest collector-emitter breakdown voltage 80V.

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