Attribute
Description
Manufacturer Part Number
MJE3055T
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
NPN,
10A,
60V
Note :
GST will not be applied to orders shipping outside of India
Stock: 200
Distributor: 13
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 200 | ₹ 27.99 | ₹ 5,598.00 |
Stock: 14734
Distributor: 116
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 16000 | ₹ 31.73 | ₹ 5,07,680.00 |
| 8000 | ₹ 31.90 | ₹ 2,55,200.00 |
| 4000 | ₹ 32.07 | ₹ 1,28,280.00 |
| 2000 | ₹ 32.23 | ₹ 64,460.00 |
| 1000 | ₹ 32.40 | ₹ 32,400.00 |
Stock: 900
Distributor: 58
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 25000 | ₹ 35.00 | ₹ 8,75,000.00 |
| 20000 | ₹ 44.14 | ₹ 8,82,800.00 |
| 15000 | ₹ 52.78 | ₹ 7,91,700.00 |
| 1500 | ₹ 61.39 | ₹ 92,085.00 |
| 50 | ₹ 69.51 | ₹ 3,475.50 |
Stock: 4647
Distributor: 130
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 140.91 | ₹ 140.91 |
| 10 | ₹ 67.14 | ₹ 671.40 |
| 100 | ₹ 59.93 | ₹ 5,993.00 |
| 500 | ₹ 47.20 | ₹ 23,600.00 |
| 1000 | ₹ 38.45 | ₹ 38,450.00 |
| 5000 | ₹ 35.91 | ₹ 1,79,550.00 |
Stock: 2779
Distributor: 142
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 145.07 | ₹ 145.07 |
| 10 | ₹ 69.42 | ₹ 694.20 |
| 100 | ₹ 61.41 | ₹ 6,141.00 |
| 500 | ₹ 48.95 | ₹ 24,475.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Maximum Collector Amps | 10A | |
| Max Collector-Emitter Breakdown | 60V | |
| Vce Saturation (Max) @ Ib, Ic | 8V @ 3.3A, 10A | |
| Collector Cutoff Max | 700µA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 4A, 4V | |
| Maximum Power Handling | 75W | |
| Transition Freq | 2MHz | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-220-3 |
Description
Measures resistance at forward current 700µA for LED or diode evaluation. Provides a maximum collector current (Ic) of 10A. Offers a collector cutoff current rated at 700µA. Features a DC current gain hFE at Ic evaluated at 8V @ 3.3A, 10A. Offers 2MHz transition frequency for seamless signal modulation. Mounting style Through Hole for structural integrity. Enclosure/case TO-220-3 providing mechanical and thermal shielding. Peak power 75W for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 8V @ 3.3A, 10A for transistor parameters. Highest collector-emitter breakdown voltage 60V.
